P-channel, single JFET transistor in SOIC package, designed for surface mount applications. Features a continuous drain current of 5.3A and a drain-to-source breakdown voltage of -30V. Offers a low drain-to-source resistance of 42mΩ and a maximum power dissipation of 2.5W. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 9ns fall time and 14ns turn-off delay.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS9430 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 528pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 60mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 14ns |
| DC Rated Voltage | -30V |
| Weight | 0.2304g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS9430 Datasheet
Download the complete datasheet for Onsemi NDS9430 to view detailed technical specifications.
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