P-channel JFET for small signal applications, featuring a 30V Drain to Source Voltage (Vdss) and a continuous drain current of 5.3A. Surface mountable in an SOIC package, this transistor offers a low Drain-source On Resistance (Rds On) of 50mR. It operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7ns turn-on delay and a 9ns fall time.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS9435A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Current Rating
-5.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
50MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
528pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.7V
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
No
Row Spacing
6.3mm
Series
PowerTrench®
Termination
SMD/SMT
Turn-Off Delay Time
14ns
Turn-On Delay Time
7ns
DC Rated Voltage
-30V
Weight
0.13g
Width
4.05mm
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi NDS9435A Datasheet
Download the complete datasheet for Onsemi NDS9435A to view detailed technical specifications.
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