P-channel JFET for small signal applications, featuring a 30V Drain to Source Voltage (Vdss) and a continuous drain current of 5.3A. Surface mountable in an SOIC package, this transistor offers a low Drain-source On Resistance (Rds On) of 50mR. It operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7ns turn-on delay and a 9ns fall time.
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Onsemi NDS9435A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 528pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| Row Spacing | 6.3mm |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
| Width | 4.05mm |
| RoHS | Not CompliantNo |
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