The NDS9933A is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.8A and a drain to source breakdown voltage of -20V. The device is packaged in a lead-free SOIC package and is RoHS compliant. The MOSFET has a maximum power dissipation of 900mW and a maximum drain to source resistance of 105mR.
PackageSOIC
Current Rating-2.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS9933A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | -2.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 405pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS9933A Datasheet
Download the complete datasheet for Onsemi NDS9933A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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