Dual N-Channel Enhancement Mode MOSFET, 60V Vdss, 3.5A continuous drain current. Features low Rds(on) of 100mΩ (max) at 10Vgs, with a nominal Vgs threshold of 1.7V. Operates from -55°C to 150°C, with a max power dissipation of 2W. Packaged in SOIC for surface mounting, supplied on 2500-piece tape and reel. Includes 5ns turn-on and 20ns turn-off delay times.
PackageSOIC
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDS9945 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 76mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Dual Supply Voltage | 60V |
| Element Configuration | Dual |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.57mm |
| Input Capacitance | 345pF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 60V |
| Weight | 0.2304g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS9945 Datasheet
Download the complete datasheet for Onsemi NDS9945 to view detailed technical specifications.
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