The NDS9955 is a 2-channel N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3A and a drain to source breakdown voltage of 50V. The device is packaged in a SOIC package and is rated for a maximum power dissipation of 900mW. The NDS9955 is not RoHS compliant and contains lead.
Onsemi NDS9955 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 345pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 130mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 50V |
| RoHS | Not Compliant |
No datasheet is available for this part.
