Surface mount N-channel MOSFET with 30V drain-source breakdown voltage and 3.7A continuous drain current. Features low 60mΩ drain-source resistance at a nominal 1.7V gate-source voltage. Dual N-channel configuration in a SOIC package, offering 2W maximum power dissipation and 320pF input capacitance. Operating temperature range from -55°C to 150°C.
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Onsemi NDS9956A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | 3.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Element Configuration | Dual |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 21ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
| Width | 4.05mm |
| RoHS | Not Compliant |
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