The NDS9957 is a 2 N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.6A and a maximum power dissipation of 900mW. The device is packaged in a SOIC package and is mounted using surface mount techniques. The NDS9957 is not RoHS compliant.
PackageSOIC
Current Rating2.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDS9957 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | 2.6A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 160mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS9957 Datasheet
Download the complete datasheet for Onsemi NDS9957 to view detailed technical specifications.
No datasheet is available for this part.