The NDS9958 is a dual-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 3.5A and a current rating of 3A. The device has a drain to source breakdown voltage of 20V and a drain to source resistance of 100mΩ. It also has a fall time of 13ns and a gate to source voltage of 20V. The NDS9958 is packaged in a surface mount SOIC package and is available on tape and reel. It is not RoHS compliant.
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Onsemi NDS9958 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 525pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 26ns |
| RoHS | Not Compliant |
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