Dual N-Channel Power MOSFET, surface mountable in SOIC package. Features 50V Drain to Source Breakdown Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers 300mR Drain to Source Resistance (Rds On Max) and 900mW Max Power Dissipation. Operates from -55°C to 150°C with a Gate to Source Voltage (Vgs) of 20V. Includes 11ns Fall Time and 9ns Turn-Off Delay Time.
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Onsemi NDS9959 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Dual |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 300mR |
| Turn-Off Delay Time | 9ns |
| DC Rated Voltage | 50V |
| Weight | 0.2304g |
| RoHS | Not Compliant |
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