P-channel enhancement mode MOSFET featuring -60V drain-to-source breakdown voltage and a continuous drain current of 2.5A. This single-element transistor offers a low on-resistance of 300mΩ at a nominal Vgs of -2.6V. Designed for surface mounting in a SOT-223 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Key switching characteristics include a 12ns turn-on delay and a 6ns fall time.
PackageSOT-223
Current Rating-2.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDT2955 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.5A
Current Rating
-2.5A
Drain to Source Breakdown Voltage
-60V
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
601pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
-2.6V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
300mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.6V
Turn-Off Delay Time
19ns
Turn-On Delay Time
12ns
DC Rated Voltage
-60V
Weight
0.2502g
Width
3.56mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDT2955 Datasheet
Download the complete datasheet for Onsemi NDT2955 to view detailed technical specifications.
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