P-Channel MOSFET, 30V Drain-Source Voltage, 5A Continuous Drain Current. Features 65mΩ Max Drain-Source On Resistance and 3W Power Dissipation. Operates from -65°C to 150°C, with a Gate-Source Voltage up to 20V. Packaged in SOT-223 for surface mounting, supplied on tape and reel. Includes 9ns Turn-On Delay and 40ns Turn-Off Delay.
Onsemi NDT452AP technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5A |
| Current | 5A |
| Current Rating | -5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| Dual Supply Voltage | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -30V |
| Width | 6.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDT452AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
