P-Channel MOSFET, surface mount, SOT-223 package. Features -30V Drain to Source Breakdown Voltage, 7.5A continuous drain current, and 26mR drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and a nominal threshold voltage of 1.5V. Offers a maximum power dissipation of 3W and a wide operating temperature range from -55°C to 150°C. Supplied on a 4000-piece tape and reel, this RoHS compliant component is lead-free.
PackageSOT-223
Current Rating-7.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDT456P technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
7.5A
Current Rating
-7.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
1.44nF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
70ns
Turn-On Delay Time
10ns
DC Rated Voltage
-30V
Weight
0.2502g
Width
6.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDT456P Datasheet
Download the complete datasheet for Onsemi NDT456P to view detailed technical specifications.
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