N-Channel Power MOSFET featuring 1500V drain-source voltage and 2.5A continuous drain current. Offers 10.5 Ohm drain-source resistance (Rds On Max) and 3W maximum power dissipation. Designed for through-hole mounting in a TO-3PF-3L package, this component operates from -55°C to 150°C. Key switching characteristics include a 15ns turn-on delay and 47ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Onsemi NDUL03N150CG technical specifications.
General
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.5mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 43.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 10.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.245577oz |
| Width | 15.5mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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