Dual transconductance amplifier featuring a 2MHz gain bandwidth product and 50V/µs slew rate. This integrated circuit offers two independent amplifiers with a maximum output current of 650µA per channel. Operating from a minimum dual supply voltage of 2V up to 22V, or a single supply from 4V to 44V, it boasts a 26kΩ input resistance and 5µA input bias current. The 16-pin SOIC package is RoHS and Halogen Free compliant.
PackageSOIC
Power1.125W
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Technical Specifications
Onsemi NE5517DG technical specifications.
General
Amplifier Type
TRANSCONDUCTANCE
Package/Case
SOIC
Common Mode Rejection Ratio
80dB
Gain Bandwidth Product
2MHz
Halogen Free
Halogen Free
Input Bias Current
5uA
Input Offset Voltage (Vos)
5mV
Input Resistance
26kR
Lead Free
Lead Free
Length
10mm
Max Dual Supply Voltage
22V
Min Dual Supply Voltage
2V
Max Input Voltage
5V
Min Input Voltage
-5V
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Output Current
650uA
Max Power Dissipation
1.125W
Max Supply Voltage
44V
Min Supply Voltage
4V
Nominal Gain Bandwidth Product
2MHz
Number of Amplifiers
2
Number of Channels
2
Number of Circuits
2
Number of Elements
2
Operating Supply Current
2.6mA
Output Current
350A
Output Current per Channel
650uA
Output Type
PUSH-PULL
Package Quantity
48
Packaging
Rail/Tube
Power Dissipation
1.125W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Slew Rate
50V/µs
Supply Type
Single, Dual
Weight
0.023492oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NE5517DG Datasheet
Download the complete datasheet for Onsemi NE5517DG to view detailed technical specifications.
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