Dual operational transconductance amplifier featuring a 2MHz gain bandwidth product and 50V/µs slew rate. This SOIC packaged IC operates from 2V to 44V dual supply or 4V to 44V single supply, with a maximum operating temperature of 70°C. It offers 80dB common mode rejection ratio and 650µA output current per channel. The device is RoHS compliant and halogen free.
PackageSOIC
Power1.125W
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Technical Specifications
Onsemi NE5517DR2G technical specifications.
General
| Amplifier Type | TRANSCONDUCTANCE |
| Package/Case | SOIC |
| Common Mode Rejection Ratio | 80dB |
| Gain Bandwidth Product | 2MHz |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Input Bias Current | 5uA |
| Input Offset Voltage (Vos) | 5mV |
| Input Offset Voltage-Max | 400uV |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Dual Supply Voltage | 22V |
| Min Dual Supply Voltage | 2V |
| Max Input Voltage | -3V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 1.125W |
| Max Supply Voltage | 44V |
| Min Supply Voltage | 4V |
| Nominal Gain Bandwidth Product | 2MHz |
| Number of Channels | 2 |
| Number of Circuits | 2 |
| Number of Elements | 2 |
| Operating Supply Current | 2.6mA |
| Operating Supply Voltage | 30V |
| Output Current per Channel | 650uA |
| Output Type | PUSH-PULL |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Slew Rate | 50V/µs |
| Slew Rate-Nom | 50V/µs |
| Supply Type | Single, Dual |
| Weight | 0.023492oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NE5517DR2G Datasheet
Download the complete datasheet for Onsemi NE5517DR2G to view detailed technical specifications.
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