The NGB18N40CLBT4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 430V and a maximum collector current of 18A. It is packaged in a TO-263-3 case and is designed for surface mount applications. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 115W. The NGB18N40CLBT4 is not RoHS compliant due to the presence of lead.
PackageTO-263-3
Current Rating18A
MountingSurface Mount
Power115W
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Technical Specifications
Onsemi NGB18N40CLBT4 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Voltage (VCEO) | 430V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 18A |
| Lead Free | Contains Lead |
| Max Collector Current | 18A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 115W |
| RoHS Compliant | No |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NGB18N40CLBT4 Datasheet
Download the complete datasheet for Onsemi NGB18N40CLBT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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