The NGB8202ANT4G is a 440V insulated gate bipolar transistor (IGBT) with a maximum collector current of 20A and a maximum power dissipation of 150W. It is packaged in a D2PAK case and is compliant with RoHS regulations. The device operates over a temperature range of -55°C to 175°C and is suitable for use in high-power applications. The IGBT is lead-free and halogen-free, making it suitable for use in environmentally sensitive applications.
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| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 440V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NGB8202A |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NGB8202ANT4G to view detailed technical specifications.
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