The NGB8206ANTF4G is a 390V insulated gate bipolar transistor with a maximum collector current of 20A and a maximum power dissipation of 150W. It is packaged in a D2PAK case and is lead-free and halogen-free. The transistor operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageD2PAK
Power150W
Quick Jump:
Technical Specifications
Onsemi NGB8206ANTF4G technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 390V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 700 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NGB8206A |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGB8206ANTF4G Datasheet
Download the complete datasheet for Onsemi NGB8206ANTF4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
