The NGB8206NG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 390V and a maximum collector current of 20A. It is designed for surface mount applications and has a maximum power dissipation of 150W. The device is packaged in a TO-263-3 package and is lead-free. The operating temperature range is from -55°C to 175°C. The NGB8206NG is RoHS compliant.
PackageTO-263-3
Current Rating20A
MountingSurface Mount
Power150W
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Technical Specifications
Onsemi NGB8206NG technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 390V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 20A |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGB8206NG Datasheet
Download the complete datasheet for Onsemi NGB8206NG to view detailed technical specifications.
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