The NGB8207ABNT4G is a 365V insulated gate bipolar transistor (IGBT) packaged in a D2PAK. It can handle a maximum collector current of 20A and a maximum power dissipation of 165W. The device is RoHS compliant and lead free, with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is available in a tape and reel packaging format.
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| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 365V |
| Collector Emitter Voltage (VCEO) | 365V |
| Collector-emitter Voltage-Max | 2.05V |
| Halogen Free | Halogen Free |
| Height | 4.83mm |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 9.65mm |
| RoHS | Compliant |
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