The NGB8207ANT4G is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 365V and a maximum collector current of 20A. It features a D2PAK package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The transistor has a maximum power dissipation of 165W and is available in tape and reel packaging.
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| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 365V |
| Collector Emitter Voltage (VCEO) | 365V |
| Collector-emitter Voltage-Max | 2.2V |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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Onsemi notice regarding the discontinuance of specific electronic components in 3Q09, including last buy dates (March 31, 2010) and last ship dates (September 30, 2010).
