The NGB8207NT4G is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 365V and a maximum collector current of 20A. It is designed for surface mount applications and has a maximum power dissipation of 165W. The device is packaged in a D2PAK package and is lead free. Operating temperature range is from -55°C to 175°C. The NGB8207NT4G is RoHS compliant.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Onsemi NGB8207NT4G technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 365V |
| Collector Emitter Voltage (VCEO) | 365V |
| Collector-emitter Voltage-Max | 2.6V |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGB8207NT4G Datasheet
Download the complete datasheet for Onsemi NGB8207NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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