The NGB8245NT4G is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 500V and a maximum collector current of 20A. It has a maximum power dissipation of 150W and is packaged in a D2PAK. The transistor operates within a temperature range of -55°C to 175°C and is compliant with RoHS regulations. It is available in a lead-free and halogen-free version.
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| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 2V |
| Halogen Free | Halogen Free |
| Height | 4.83mm |
| Lead Free | Lead Free |
| Length | 9.65mm |
| Max Breakdown Voltage | 500V |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NGB8245 |
| Width | 10.29mm |
| RoHS | Compliant |
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