The NGD15N41CLT4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 440V and a maximum collector current of 15A. It has a maximum power dissipation of 107W and is packaged in a TO-252-3 surface mount package. The device operates over a temperature range of -55°C to 175°C and is not RoHS compliant. It is available in a tape and reel packaging format.
PackageTO-252-3
Current Rating15A
MountingSurface Mount
Power107W
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Technical Specifications
Onsemi NGD15N41CLT4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Voltage (VCEO) | 440V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 15A |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 440V |
| Max Collector Current | 15A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 107W |
| RoHS Compliant | No |
| DC Rated Voltage | 410V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NGD15N41CLT4 Datasheet
Download the complete datasheet for Onsemi NGD15N41CLT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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