The NGD15N41CLT4G is a 440V insulated gate bipolar transistor (IGBT) with a maximum collector current of 15A. It features a TO-252-3 package and is designed for surface mount applications. The device has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is RoHS compliant and has a maximum power dissipation of 107W.
PackageTO-252-3
Current Rating15A
MountingSurface Mount
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Technical Specifications
Onsemi NGD15N41CLT4G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Voltage (VCEO) | 440V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 15A |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 440V |
| Max Collector Current | 15A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 4us |
| Turn-On Delay Time | 0.7us |
| DC Rated Voltage | 410V |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGD15N41CLT4G Datasheet
Download the complete datasheet for Onsemi NGD15N41CLT4G to view detailed technical specifications.
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