The NGD18N40ACLBT4G is a 430V insulated gate bipolar transistor (IGBT) in a DPAK package, suitable for high-power applications. It has a maximum collector current of 15A and a maximum power dissipation of 115W. The device operates over a temperature range of -55°C to 175°C. The NGD18N40ACLBT4G is lead-free and halogen-free, and is compliant with RoHS regulations.
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| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 430V |
| Collector-emitter Voltage-Max | 2.5V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 430V |
| Max Collector Current | 15A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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