
The NGD8201ANT4G is a 440V insulated gate bipolar transistor with a maximum collector current of 20A and a maximum power dissipation of 125W. It is packaged in a lead-free, plastic DPAK case and is suitable for operating temperatures between -55°C and 175°C. The transistor is compliant with RoHS regulations and is available in tape and reel packaging.
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| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 440V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Height | 2.38mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 440V |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8us |
| Turn-On Delay Time | 1.5us |
| Weight | 0.009185oz |
| Width | 7.49mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NGD8201ANT4G to view detailed technical specifications.
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