The NGD8201NT4 is a surface mount insulated gate bipolar transistor (IGBT) from Onsemi. It features a collector-emitter breakdown voltage of 440V and a maximum collector current of 20A. The device is rated for a maximum power dissipation of 125W and has an operating temperature range of -55°C to 175°C. The NGD8201NT4 is available in a TO-252-3 package and is packaged on a tape and reel with 2500 devices per reel.
PackageTO-252-3
Current Rating20A
MountingSurface Mount
Power125W
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Technical Specifications
Onsemi NGD8201NT4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 440V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 20A |
| Lead Free | Contains Lead |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NGD8201NT4 Datasheet
Download the complete datasheet for Onsemi NGD8201NT4 to view detailed technical specifications.
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