The NGD8205ANT4G is a 390V insulated gate bipolar transistor (IGBT) packaged in a DPAK case. It can handle a maximum collector current of 20A and a maximum power dissipation of 125W. The device is RoHS compliant and lead free, making it suitable for a wide range of applications. It has a maximum operating temperature of 175°C and is available in tape and reel packaging.
PackageDPAK
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Technical Specifications
Onsemi NGD8205ANT4G technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 125W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGD8205ANT4G Datasheet
Download the complete datasheet for Onsemi NGD8205ANT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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