
The NGD8205ANT4G is a 390V insulated gate bipolar transistor (IGBT) packaged in a DPAK case. It can handle a maximum collector current of 20A and a maximum power dissipation of 125W. The device is RoHS compliant and lead free, making it suitable for a wide range of applications. It has a maximum operating temperature of 175°C and is available in tape and reel packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NGD8205ANT4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 125W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NGD8205ANT4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
