The NGD8205NT4G is a 390V insulated gate bipolar transistor with a maximum collector current of 20A and maximum power dissipation of 125W. It is packaged in a TO-252-3 surface mount package and is suitable for operating temperatures between -55°C and 175°C. The device is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The transistor is rated for a maximum breakdown voltage of 390V and has a maximum collector-emitter voltage of 1.9V.
PackageTO-252-3
Current Rating20A
MountingSurface Mount
Power125W
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Technical Specifications
Onsemi NGD8205NT4G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Voltage (VCEO) | 390V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 20A |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 390V |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGD8205NT4G Datasheet
Download the complete datasheet for Onsemi NGD8205NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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