The NGD8209NT4G is an insulated gate bipolar transistor from Onsemi with a collector-emitter breakdown voltage of 445V and a maximum collector current of 12A. It is designed for surface mount applications and is packaged in a TO-252-3 package. The transistor has a maximum power dissipation of 94W and operates over a temperature range of -55°C to 175°C. It is lead free and RoHS compliant.
Onsemi NGD8209NT4G technical specifications.
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 445V |
| Collector-emitter Voltage-Max | 2.3V |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
