The NGTB15N120FL2WG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is lead-free.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 294W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 110ns |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NGTB15N120FL2WG to view detailed technical specifications.
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