The NGTB15N120FLWG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It has a maximum power dissipation of 156W and is packaged in a TO-247-3 case. The transistor is lead-free and halogen-free, and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NGTB15N120FLWG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Halogen Free | Halogen Free |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 156W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 166ns |
| RoHS Compliant | Yes |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NGTB15N120FLWG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
