The NGTB15N135IHRWG is an insulated gate bipolar transistor from Onsemi with a collector-emitter breakdown voltage of 1.35kV and a maximum collector current of 30A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device is rated for operation between -40°C and 175°C and has a maximum power dissipation of 357W. The NGTB15N135IHRWG is compliant with RoHS regulations and is available in a quantity of 30 per rail/tube packaging.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi NGTB15N135IHRWG technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.35kV |
| Collector-emitter Voltage-Max | 2.65V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB15N135IHRWG Datasheet
Download the complete datasheet for Onsemi NGTB15N135IHRWG to view detailed technical specifications.
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