N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-220AB package. Features a 600V collector-emitter voltage, 30A continuous collector current, and 130W maximum power dissipation. Designed with a single N-channel configuration and a tab for enhanced thermal performance. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi NGTB15N60EG technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.53(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.28(Max) |
| Seated Plane Height (mm) | 19.68(Max) |
| Pin Pitch (mm) | 2.66(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 30A |
| Maximum Power Dissipation | 130000mW |
| Typical Collector Emitter Saturation Voltage | 1.7V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NGTB15N60EG Datasheet
Download the complete datasheet for Onsemi NGTB15N60EG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.