N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-220AB package. Features a 600V collector-emitter voltage, 30A continuous collector current, and 130W maximum power dissipation. Designed with a single N-channel configuration and a tab for enhanced thermal performance. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Onsemi NGTB15N60EG technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.53(Max)
Package Width (mm)
4.83(Max)
Package Height (mm)
9.28(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.66(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
30A
Maximum Power Dissipation
130000mW
Typical Collector Emitter Saturation Voltage
1.7V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi NGTB15N60EG Datasheet
Download the complete datasheet for Onsemi NGTB15N60EG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.