Insulated Gate Bipolar Transistor (IGBT) with integrated diode, featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 30A. This NPT IGBT offers a low collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 117W. Packaged in a TO-220-3 configuration, it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with a turn-on delay of 65ns and turn-off delay of 170ns. The component is RoHS compliant and supplied in a 50-piece rail/tube.
PackageTO-220-3
Power47W
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Technical Specifications
Onsemi NGTB15N60S1EG technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Height | 15.75mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 117W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 270ns |
| RoHS Compliant | Yes |
| Series | NGTB15N60S1 |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 65ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB15N60S1EG Datasheet
Download the complete datasheet for Onsemi NGTB15N60S1EG to view detailed technical specifications.
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