The NGTB20N120LWG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It is packaged in a TO-247-3 case and has a maximum power dissipation of 192W. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. The transistor has a turn-on delay time of 86ns and a turn-off delay time of 235ns.
PackageTO-247-3
Power77W
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Technical Specifications
Onsemi NGTB20N120LWG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 192W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 77W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 235ns |
| Turn-On Delay Time | 86ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB20N120LWG Datasheet
Download the complete datasheet for Onsemi NGTB20N120LWG to view detailed technical specifications.
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