The NGTB20N60L2TF1G is a 600V insulated gate bipolar transistor with a maximum collector current of 40A and maximum power dissipation of 64W. It operates within a temperature range of -55°C to 175°C. This lead-free and halogen-free device is compliant with RoHS regulations. The transistor features a trench-gate design and is packaged in a rail/tube format with 30 units per package.
Quick Jump:
Technical Specifications
Onsemi NGTB20N60L2TF1G technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector-emitter Voltage-Max | 1.65V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 64W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 70ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB20N60L2TF1G Datasheet
Download the complete datasheet for Onsemi NGTB20N60L2TF1G to view detailed technical specifications.
No datasheet is available for this part.