The NGTB30N120IHRWG is an insulated gate bipolar transistor (IGBT) packaged in a TO-247-3 case. It has a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 60A. The device is rated for a maximum power dissipation of 384W and operates over a temperature range of -40°C to 175°C. The NGTB30N120IHRWG is lead-free and RoHS compliant, but not Reach SVHC compliant.
PackageTO-247-3
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Technical Specifications
Onsemi NGTB30N120IHRWG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.5V |
| Halogen Free | Halogen Free |
| Height | 21.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.25mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 384W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB30N120IHRWG Datasheet
Download the complete datasheet for Onsemi NGTB30N120IHRWG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.