The NGTB30N60L2WG is a 600V insulated gate bipolar transistor with a maximum collector current of 100A and a maximum power dissipation of 225W. It is packaged in a TO-247-3 case and is suitable for through-hole mounting. The transistor operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. It features a reverse recovery time of 70ns and is available in a rail/tube packaging configuration with 30 devices per package.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Onsemi NGTB30N60L2WG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 70ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB30N60L2WG Datasheet
Download the complete datasheet for Onsemi NGTB30N60L2WG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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