The NGTB30N60SWG is a 600V insulated gate bipolar transistor with a maximum collector current of 60A. It features a TO-247 package and is designed for through-hole mounting. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and has a maximum power dissipation of 189W.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi NGTB30N60SWG technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 189W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 200ns |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB30N60SWG Datasheet
Download the complete datasheet for Onsemi NGTB30N60SWG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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