The NGTB40N60FL2WG is an insulated gate bipolar transistor from Onsemi with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It is packaged in a TO-247 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 366W. The NGTB40N60FL2WG is RoHS compliant and lead-free.
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| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 366W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 72ns |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
| Width | 5.3mm |
| RoHS | Compliant |
