The NGTB40N60L2WG is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 80A. It features a TO-247 package and is designed for through-hole mounting. The device has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations but not Reach SVHC compliant. The NGTB40N60L2WG has a maximum power dissipation of 417W and a reverse recovery time of 73ns.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi NGTB40N60L2WG technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.61V |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 73ns |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB40N60L2WG Datasheet
Download the complete datasheet for Onsemi NGTB40N60L2WG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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