The NGTB50N120FL2WG is an insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 100A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The IGBT has a maximum power dissipation of 535W and a reverse recovery time of 256ns.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi NGTB50N120FL2WG technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Height | 21.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.25mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 535W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 256ns |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB50N120FL2WG Datasheet
Download the complete datasheet for Onsemi NGTB50N120FL2WG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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