The NGTB50N60FL2WG is an insulated gate bipolar transistor from Onsemi with a collector-emitter breakdown voltage of 600V and a maximum collector current of 100A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device is RoHS compliant and has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The transistor has a maximum power dissipation of 417W and a reverse recovery time of 94ns.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Onsemi NGTB50N60FL2WG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 94ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB50N60FL2WG Datasheet
Download the complete datasheet for Onsemi NGTB50N60FL2WG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.