The NGTB50N60FLWG is a 600V insulated gate bipolar transistor with a maximum collector current of 100A. It features a TO-247-3 package and is lead free and RoHS compliant. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 223W. The NGTB50N60FLWG is suitable for high-power applications and is available in a rail/tube packaging configuration with 30 devices per package.
PackageTO-247-3
Power223W
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Technical Specifications
Onsemi NGTB50N60FLWG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Halogen Free |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 223W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 223W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 85ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 292ns |
| Turn-On Delay Time | 116ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB50N60FLWG Datasheet
Download the complete datasheet for Onsemi NGTB50N60FLWG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.