The NGTB50N60SWG is a 600V insulated gate bipolar transistor (IGBT) packaged in a TO-247-3 case, suitable for through hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The device features a collector-emitter breakdown voltage of 600V and a maximum collector current of 100A.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Onsemi NGTB50N60SWG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 376ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB50N60SWG Datasheet
Download the complete datasheet for Onsemi NGTB50N60SWG to view detailed technical specifications.
No datasheet is available for this part.
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