The NGTB50N60SWG is a 600V insulated gate bipolar transistor (IGBT) packaged in a TO-247-3 case, suitable for through hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The device features a collector-emitter breakdown voltage of 600V and a maximum collector current of 100A.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 376ns |
| RoHS Compliant | Yes |
| RoHS | Compliant |
These are design resources that include the Onsemi NGTB50N60SWG
onsemi product discontinuance notice PD23762Z for various standard parts. Last time buy date is July 29, 2021, and last ship date is January 29, 2022.
