The NGTB60N60SWG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 120A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device has a maximum power dissipation of 298W and is RoHS compliant. The operating temperature range is from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi NGTB60N60SWG technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 21.08mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 76ns |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NGTB60N60SWG Datasheet
Download the complete datasheet for Onsemi NGTB60N60SWG to view detailed technical specifications.
No datasheet is available for this part.
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