The NGTG12N60TF1G is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi. It features a collector-emitter breakdown voltage of 600V and a continuous collector current of 20A. The module is designed for through hole mounting and has a maximum operating temperature range of -55°C to 150°C. It is compliant with RoHS regulations and is available in a package quantity of 30 units per rail/Tube packaging.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 20A |
| Height | 26.5mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NGTG12N60TF1G |
| Width | 5.5mm |
| RoHS | Compliant |
