The NGTG20N60L2TF1G is a MOSFET with a collector-emitter breakdown voltage of 600V and a maximum collector current of 40A. It has a maximum power dissipation of 64W and is packaged in a through-hole package. The operating temperature range is from -55°C to 175°C. The device is lead-free and RoHS compliant.
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| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.65V |
| Halogen Free | Halogen Free |
| Height | 26.5mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 64W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Ammo Pack |
| Power Dissipation | 64W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NGTG20N60L2TF1G |
| Width | 5.5mm |
| RoHS | Compliant |
These are design resources that include the Onsemi NGTG20N60L2TF1G
Onsemi product discontinuance notice PD23527Z for various image sensors, power management ICs, and discrete components. Last time buy date is April 9, 2021.
